BT149G,126 datasheet

Маркировка

BT149G,126
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BT149G,126 Breakover Current Ibo Max: 9 A Current - Gate Trigger (igt) (max): 200?µA Current - Hold (ih) (max): 5mA Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A Current - Off State (max): 100?µA Current - On State (it (av)) (max): 500mA Current - On State (it (rms) (max): 800mA Current - On State (it (rms)) (max): 800mA Forward Voltage Drop: 1.7 V Gate Trigger Current (igt): 0.2 mA Gate Trigger Voltage (vgt): 0.8 V Holding Current (ih Max): 5 mA ID_COMPONENTS: 1948226 Maximum Gate Peak Inverse Voltage: 5 V Mounting Style: SMD/SMT Mounting Type: Through Hole Off-state Leakage Current @ Vdrm Idrm: 0.1 mA Package / Case: TO-92-3 (Standard Body), TO-226 Rated Repetitive Off-state Voltage Vdrm: 600 V Scr Type: Sensitive Gate Voltage - Gate Trigger (vgt) (max): 800mV Voltage - Off State: 600V Voltage - On State (vtm) (max): 1.7V Other Names: 933998440126, BT149G AMO
Количество страниц

12 шт.
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